Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Plis, E ^a   Kim, H S ^a   Bishop, G ^a   Krishna, S ^a   Banerjee, K ^b   Ghosh, S ^b  

^a MSC01 1070   (United States)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIVIL AVIATION; DIFFUSION; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS;

APPLIED BIAS; BARRIER LAYER; DETECTOR PERFORMANCE; DIFFUSION LENGTHS; I-V MEASUREMENTS; INAS/GASB; LATERAL DIFFUSION; LIMITING FACTORS; MINORITY CARRIERS; ORDERS-OF-MAGNITUDE; STRAINED LAYER SUPERLATTICE; TEMPERATURE-DEPENDENT;

SEMICONDUCTOR DOPING;

EID: 52949152740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990049     Document Type: Article

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