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Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 271-274
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PECVD SiO2 and SiON films dependant on the rf bias power for low-loss silica waveguide
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Author keywords
Annealing; Plasma enhanced chemical vapor deposition; Silicon dioxide; Silicon oxynitride
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Indexed keywords
ADHESION;
ANNEALING;
ATOMIC FORCE MICROSCOPY;
CHARGED PARTICLES;
ELECTRODES;
MORPHOLOGY;
OPTICAL WAVEGUIDES;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMAS;
REFRACTIVE INDEX;
SILANES;
SINGLE MODE FIBERS;
SURFACE ROUGHNESS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ELECTRONEGATIVITY;
PLANAR LIGHTWAVE CIRCUITS (PLC);
SILICON OXYNITRIDE;
SUBSTRATE TEMPERATURE;
SILICA;
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EID: 13444302496
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2004.07.044 Document Type: Conference Paper |
Times cited : (29)
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References (12)
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