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Volumn 38, Issue 9, 2009, Pages 1944-1947

Electrical characterization of different passivation treatments for long-wave infrared InAs/GaSb strained layer superlattice photodiodes

(5) Banerjee, Koushik a Ghosh, Siddhartha a Mallick, Shubhrangshu b Plis, Elena c Krishna, Sanjay c

a UNIVERSITY OF ILLINOIS AT CHICAGO (United States)

b EPIR TECHNOLOGIES INC (United States)

c UNIVERSITY OF NEW MEXICO (United States)

Author keywords

Long wavelength infrared; Passivation; Strained layer superlattice

Indexed keywords

AMMONIUM SULFIDE; CUTOFF WAVELENGTHS; DIODE MEASUREMENTS; ELECTRICAL CHARACTERIZATION; INAS/GASB; LONG-WAVELENGTH INFRARED; LONGWAVE INFRARED; PASSIVANTS; PASSIVATION TREATMENT; SILICON DIOXIDE; STRAINED LAYER SUPERLATTICE; SURFACE RESISTIVITY; ZERO-BIAS RESISTANCE AREA PRODUCT;

AMMONIUM COMPOUNDS; INFRARED DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; SILICON NITRIDE; SILICON OXIDES; SUPERLATTICES; SURFACE TREATMENT; ZINC; ZINC SULFIDE;

PASSIVATION;

EID: 68949164780 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-009-0850-z Document Type: Article

Times cited : (27)

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