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Electronics Letters

Volumn 42, Issue 21, 2006, Pages 1248-1249

Electrochemical sulphur passivation of InAs/GaSb strain layer superlattice detectors

(4) Plis, E a Rodriguez, J B a Lee, S J b Krishna, S a

a University of New Mexico (United States)

b Korea Research Institute of Standards and Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC IMPEDANCE; SULPHUR COATING; SULPHUR PASSIVATION; SUPERLATTICE DETECTORS;

AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; SEMICONDUCTOR SUPERLATTICES;

PASSIVATION;

EID: 33750020889 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20062495 Document Type: Article

Times cited : (45)

References (7)

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- Midwave infrared type-IIInAs/GaSb superlattice detectors with mixed interfaces
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3
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- Passivation of type-II InAs/GaSb superlattice photodiodes
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5
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- Bessolov, V.N., Lebedev, M.V., Novikov, E.B., and Tsarenkov, B.T.: ' Sulfide passivation of III-V semiconductors: Kinetics of the photoelectrochemical reaction ', J. Vac. Sci. Technol. B, 1993, 11, (10), p. 10-14
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7
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- Schwartz, G.P.¹

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