Passivation of type II InAs/GaSb superlattice photodetectors

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5732, Issue , 2005, Pages 316-325

  Hood, Andrew ^a   Wei, Yajun ^a   Gin, Aaron ^a   Razeghi, Manijeh ^a   Tidrow, Meimei Z ^b   Nathan, Vaidya ^c  

^a NORTHWESTERN UNIVERSITY   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Ammonium sulfide; GaSb; InAs; Infrared; Passivation; Photoluminescence; Sulfur; Superlattices; Type II

Indexed keywords

AMMONIUM SULFIDE; GASB; INAS; SURFACE STATE DENSITY; TYPE II;

AMMONIUM COMPOUNDS; FERMI LEVEL; LEAKAGE CURRENTS; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SULFUR; SUPERLATTICES;

PHOTODETECTORS;

EID: 21844462334     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.597140     Document Type: Conference Paper

References (12)

1. P.S. Dutta, H.L. Bhat V. Kumar, "The physics and technology of gallium antimonide: An emerging optoelectronic material", J. Appl. Phys., 81(9), 5821-5870, 1997.
2. M. Razeghi, "Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices", Eur. Phys. J. AP, 23, 149-205, 2003.
3. Y. Wei, A. Gin, M. Razeghi, G.J. Brown, "Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications", Appl. Phys. Lett, 80(18), 3262-3264, 2002.
4. Y.Wei, A. Gin, M. Razeghi, G.J. Brown. "Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelengths approaching 32 μm", Appl. Phys. Lett., 81(19), 3675-3677, 2002.
5. D.Y. Petrovykh, M.J. Yang, L.J. Whitman, "Chemical and electronic properties of sulfur-passivated InAs surfaces", Surf. Sci., 523, 231-240, 2003.
6. B.Wu, G. Xia, Z. Li, J. Zhou, "Sulphur passivation of the InGaAsSb/GaSb photodiodes", Appl. Phys. Lett., 80(7), 1303-1305, 2002.
7. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, M. Tidrow, "Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes", Appl. Phys. Lett., 84(12), 2037-2039, 2004.
8. L. Burkle, F. Fuchs, R. Kiefer, W. Pletschen, R.E. Sah, J. Schmitz, "Electrical Characterization of InAs/(GaIn)Sb infrared superlattice photodiodes for the 8 to 12 um range", Mat. Res. Soc. Symp. Proc., 607, 77-82, 2000.
9. R. Iyer, D.L. Lue, "Role of polysulfides in the passivation of the InP surface", Appl. Phys. Lett., 59(4), 437-439, 1991.
10. E. Papis, A. Piotrowska, E. Kaminska, K. Golaszewska, W. Jung, J. Katcki, A Kudla, M. Piskorski, T.T. Piotrowski, J. Adamczewska, "Sulfide treatment of GaSb surface: influence on the LPE growth of InGaAsSb/AlGaAsSb heterostructures", Vacuum, 57, 171-178, 2000.
11. D.Y. Petrovykh, M.J. Yang, L.J. Whitman, "Chemical and electronic properties of sulfur-passivated InAs surfaces", Surf. Sci., 523, 231-240, 2003.
12. W.J. Jiang, Y.M. Sun, M.C. Wu, "Electrical and photoluminescent properties of high-quality GaSb and AlGaSb layers grown from Sb-rich solutions by liquid-phase epitaxy", J. Appl. Phys., 77(4), 1725-1728, 1994.