Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2037-2039

  Gin, A ^a   Wei, Y ^a   Hood, A ^a   Bajowala, A ^a   Yazdanpanah, V ^a   Razeghi, M ^a   Tidrow, M ^b  

^a Northwestern University   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENTS; ZERO-BIAS RESISTANCE;

AMMONIUM COMPOUNDS; CURRENT DENSITY; ELECTRON TRAPS; ELECTRON TUNNELING; INTERFACES (MATERIALS); PASSIVATION; PHOTOLITHOGRAPHY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUPERLATTICES; SURFACE TREATMENT;

PHOTODETECTORS;

EID: 1942509394     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1686894     Document Type: Article

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