Time-resolved photoluminescence of a two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterostructure fabricated on ammonothermal GaN substrates

Applied Physics Express

Volumn 4, Issue 4, 2011, Pages

  Chichibu, Shigefusa F ^a   Hazu, Kouji ^a   Kagamitani, Yuji ^a   Onuma, Takeyoshi ^a   Ehrentraut, Dirk ^a   Fukuda, Tsuguo ^a   Ishiguro, Tohru ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; AMMONOTHERMAL; DECAY TIME; FREE EXCITONS; GAN SUBSTRATE; GASPHASE; HETERO INTERFACES; HETEROSTRUCTURES; IMMOBILE CHARGES; LOW TEMPERATURES; METAL-ORGANIC VAPOR PHASE EPITAXY; ORDERS OF MAGNITUDE; OXYGEN CONTAMINATION; PHOTOEXCITED HOLES; PHOTOLUMINESCENCE SIGNALS; POLARIZATION DISCONTINUITY; TIME-RESOLVED PHOTOLUMINESCENCE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; OXYGEN; PHOTOLUMINESCENCE; SUBSTRATES; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 79954437365     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.045501     Document Type: Article

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