Evaluation of GaN substrates grown in supercritical basic ammonia

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Saito, Makoto ^a   Yamada, Hisashi ^a   Iso, Kenji ^a   Sato, Hitoshi ^a   Hirasawa, Hirohiko ^a   Kamber, Derrick S ^a   Hashimoto, Tadao ^a   Denbaars, Steven P ^a   Speck, James S ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKALINITY; EMISSION SPECTROSCOPY; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; HYDROGEN; LIGHT; LIGHT EMITTING DIODES; LIGHT METALS; MASS SPECTROMETRY; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; OXYGEN; PHYSICAL OPTICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; STRUCTURAL METALS; X RAY DIFFRACTION ANALYSIS;

AMMONOTHERMAL METHODS; EPITAXIAL WAFERS; GAN CRYSTALS; GAN SUBSTRATES; HIGH CONCENTRATIONS; LIGHT EMITTING DIODE LEDS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MULTIPLE GRAINS; SECONDARY ION MASS SPECTROSCOPIES; SIMS DEPTH PROFILES; SUPER-CRITICAL;

SUBSTRATES;

EID: 59849115850     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079813     Document Type: Article

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