Ammonothermal epitaxy of thick GaN film using NH4Cl mineralizer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 4018-4020

  Kagamitani, Yuji ^a   Ehrentraut, Dirk ^a   Yoshikawa, Akira ^a   Hoshino, Naruhiro ^a   Fukuda, Tsuguo ^a   Kawabata, Shinichiro ^b   Inaba, Katsuhiko ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

^c RIGAKU CORPORATION   (Japan)

Author keywords

Acidic mineralizers; Ammonothermal method; Ga precursor; GaN film; GaN precursor; Homoepitaxy

Indexed keywords

CHLORINE COMPOUNDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; SUPERSATURATION;

ACIDIC MINERALIZERS; AMMONOTHERMAL METHOD; GA PRECURSOR; GAN PRECURSOR;

THIN FILMS;

EID: 33646893686     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4018     Document Type: Article

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