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Journal of Crystal Growth

Volumn 312, Issue 18, 2010, Pages 2503-2506

Improvement of crystal quality in ammonothermal growth of bulk GaN

(4) Hashimoto, Tadao a Letts, Edward a Ikari, Masanori a Nojima, Yoshihiro a

a SixPoint Materials Inc (United States)

Author keywords

A2. Growth from solutions; A2. Single crystal growth; B1. Nitrides; B1. Semiconducting gallium compounds

Indexed keywords

A2. GROWTH FROM SOLUTIONS; A2. SINGLE CRYSTAL GROWTH; AMMONOTHERMAL GROWTH; AMMONOTHERMAL METHOD; B1. NITRIDES; CRYSTAL QUALITIES; GAN CRYSTALS; GROWTH CONDITIONS; GROWTH FROM SOLUTION; SEMI-TRANSPARENT; STRUCTURAL QUALITIES; X RAY ROCKING CURVE;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; OXYGEN; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SODIUM; SUPERCONDUCTING FILMS;

SEMICONDUCTOR GROWTH;

EID: 77955417375 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.04.002 Document Type: Conference Paper

Times cited : (24)

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