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Journal of Crystal Growth

Volumn 312, Issue 18, 2010, Pages 2620-2623

Vacancy defects in bulk ammonothermal GaN crystals

(3) Tuomisto, F a Mki, J M a Zajc, M b

a AALTO UNIVERSITY (Finland)

b AMMONO Sp Zoo (Poland)

Author keywords

A1. Characterization; A1. Defects; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting IIIV materials

Indexed keywords

A1. CHARACTERIZATION; A1. DEFECTS; A2. SINGLE CRYSTAL GROWTH; B2. SEMICONDUCTING IIIV MATERIALS; SEMI CONDUCTING III-V MATERIALS;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; GRAIN BOUNDARIES; GROWTH TEMPERATURE; OXYGEN; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

VACANCIES;

EID: 77955427803 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.04.023 Document Type: Conference Paper

Times cited : (45)

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