Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer

Journal of Crystal Growth

Volumn 312, Issue 22, 2010, Pages 3384-3387

  Kagamitani, Y ^a   Kuribayashi, T ^a   Hazu, K ^a   Onuma, T ^a   Tomida, D ^a   Simura, R ^b   Chichibu, S F ^a   Sugiyama, K ^b   Yokoyama, C ^a   Ishiguro, T ^a   Fukuda, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A.1. Crystal structure; A.2. Growth from high temperature solutions; A.2. Single crystal growth; A.3. Liquid phase epitaxy; B.2. Semiconducting gallium compounds

Indexed keywords

A.1. CRYSTAL STRUCTURE; AMMONOTHERMAL; AMMONOTHERMAL METHOD; B.2. SEMICONDUCTING GALLIUM COMPOUNDS; EMISSION BANDS; GAN CRYSTALS; GAN EPITAXIAL LAYERS; GROWTH FROM HIGH-TEMPERATURE SOLUTIONS; HIGH GROWTH RATE; HIGH-TEMPERATURE GROWTH; LIQUID PHASE; NEAR BAND EDGE EMISSIONS; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; WURTZITE GAN; WURTZITE PHASE; ZINC-BLENDE;

CRYSTALLIZATION; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIQUIDS; NEEDLES; OPTICAL ENGINEERING; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; ZINC SULFIDE;

CRYSTAL STRUCTURE;

EID: 77957857024     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.07.065     Document Type: Article

References (16)

1. R. Dwillinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi J. Cryst. Growth 310 2008 3911
2. R. Dwillinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, and H. Hayashi J. Cryst. Growth 311 2009 3015
3. A. Yoshikawa, E. Ohshima, T. Fukuda, H. Tsuji, and K. Oshima J. Cryst. Growth 260 2004 67
4. Y. Kagamitani, D. Ehrentraut, A. Yoshikawa, N. Hoshino, T. Fukuda, S. Kawabata, and K. Inaba Jpn. J. Appl. Phys. 45 5A 2006 4018 4020
5. D. Ehrentraut, N. Hoshino, Y. Kagamitani, A. Yoshikawa, T. Fukuda, H. Itoh, and S. Kawabata J. Mater. Chem. 17 2007 886
6. D. Ehrentraut, Y. Kagamitani, A. Yoshikawa, N. Hoshino, H. Itoh, S. Kawabata, K. Fujii, T. Yao, and T. Fukuda J. Mater. Sci. 43 2007 2270
7. T. Hashimoto, M. Saito, K. Fujito, F. Wu, J.S. Speck, and S. Nakamura J. Cryst. Growth 305 2007 311
8. D. Tomida, T. Kuribayashi, T. Ishinabe, Y. Kagamitani, T. Ishiguro, C. Yokoyama, The Society of Chemical Engineers Japan (SCEJ) 75th Annual Meeting, 2010, G208.
9. R.J. Jouet, A.P. Purdy, R.L. Wells, and J.F. Janik J. Cluster Sci. 13 2002 469
10. J.A. Jegier, S. McKernan, A.P. Purdy, and W.L. Gladfelter Chem. Mater. 12 2000 1003
11. W.Y. Wang, Y.P. Xu, D.F. Zhang, and X.L. Chen Mater. Res. Bull. 36 2001 2155
12. Y.-S. Wu, W.-K. Chang, and H.-Y. Lai J. Cryst. Growth 310 2008 2800
13. J. Neugebauer, and C.G. Van de Walle Phys. Rev. Lett. 75 1995 4452
14. E.F. Schubert, I.D. Goepfert, W. Grieshaber, and J.M. Redwing Appl. Phys. Lett. 71 1997 921
15. M. Yoshikawa, M. Kunzer, J. Wagner, H. Obloh, P. Schlotter, R. Schmidt, N. Herres, and U. Kaufmann J. Appl. Phys. 86 1999 4400
16. Y. Kagamitani, S.F. Chichibu, T. Onuma, K. Hazu, T. Fukuda, T. Ishiguro, in: Proceedings of the 36th International Symposium on Compound Semiconductors (ISCS 2009), No. 12.2.