Unstrained InAlN/GaN HEMT structure

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 3, 2004, Pages 785-790

  Neuburger, M ^a   Zimmermann, T ^a   Kohn, E ^a   Dadgar, A ^b   Schulze, F ^b   Krtschil, A ^b   Gunther M ^b   Witte, H ^b   Blasing J ^b   Krost, A ^b   Daumiller, I ^c   Kunze, M ^c  

^a UNIVERSITY OF ULM   (Germany)

^b Inst Experimentelle Physik O   (Germany)

^c MicroGaN GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CHARGE; POLARIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES;

SI-SUBSTRATE; UNPASSIVATED UNDOPED SAMPLES;

GALLIUM NITRIDE;

EID: 24144431666     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002831     Document Type: Conference Paper

References (6)

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