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Volumn 23, Issue 7, 2011, Pages 1742-1752

Controlled electrochemical formation of GexSbyTe z using atomic layer deposition (ALD)

Author keywords

ALD; E ALD; electrodeposition; phase change memory; UPD

Indexed keywords

ALD; AQUEOUS SOLUTIONS; ATOMIC LAYER; BINARY CYCLES; CRYSTALLINITIES; E-ALD; ELECTROCHEMICAL FORMATION; NANO FILMS; SYSTEMATIC STUDY; TERNARY MATERIALS; UPD;

EID: 79953716558     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm102672j     Document Type: Article
Times cited : (21)

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