SCOPUS 정보 검색 플랫폼

Volumn 155, Issue 2, 2008, Pages

Characterization of Ge1-xTex chalcogenide thin films deposited by MOCVD for phase change memory applications

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDES; ELECTRODEPOSITION; ELECTRONIC STRUCTURE; FILM GROWTH; GALLIUM ALLOYS; PHASE CHANGE MEMORY;

CHALCOGENIDE THIN FILMS; HOMOGENEOUS DISTRIBUTION; TELLURIUM DEPOSITION; TELLURIUM DEPOSITION TEMPERATURE;

THIN FILMS;

EID: 37549032489 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2815603 Document Type: Article

Times cited : (12)

References (10)

1
- 4544346544
- Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, K. C. Ryoo, H. S. Hong, H. C. Koo, F. Yeung, J. H. Oh, and H. J. Kim, Tech. Dig. - Int. Electron Devices Meet., 2003, 37.1.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 3711
- Hwang, Y.N.¹ Lee, S.H.² Ahn, S.J.³ Lee, S.Y.⁴ Ryoo, K.C.⁵ Hong, H.S.⁶ Koo, H.C.⁷ Yeung, F.⁸ Oh, J.H.⁹ Kim, H.J.¹⁰

2
- 0037722680
- 0021-4922 10.1143/JJAP.42.1026
- S. L. Cho, J. H. Ha, B. J. Kuh, C. M. Lee, J. H. Park, S. D. Nam, H. Horii, B. O. Cho, K. C. Ryoo, and S. O. Park, VLSI Tech. Dig. 0021-4922 10.1143/JJAP.42.1026, 42, 1026 (2003).
- (2003) VLSI Tech. Dig. , vol.42 , pp. 1026
- Cho, S.L.¹ Ha, J.H.² Kuh, B.J.³ Lee, C.M.⁴ Park, J.H.⁵ Nam, S.D.⁶ Horii, H.⁷ Cho, B.O.⁸ Ryoo, K.C.⁹ Park, S.O.¹⁰

3
- 33748516435
- 0021-8979
- E. Morales-Sanchez and E. F. Prokhorov, J. Appl. Phys., 91, 698 (2002). 0021-8979
- (2002) J. Appl. Phys. , vol.91 , pp. 698
- Morales-Sanchez, E.¹ Prokhorov, E.F.²

4
- 10644259758
- 0040-6090 10.1016/j.tsf.2004.06.141
- E. Morales-Sanchez and E. F. Prokhorov, Thin Solid Films 0040-6090 10.1016/j.tsf.2004.06.141, 471, 243 (2005).
- (2005) Thin Solid Films , vol.471 , pp. 243
- Morales-Sanchez, E.¹ Prokhorov, E.F.²

5
- 33644778523
- 1044-5803 10.1016/j.matchar.2005.11.020
- M. S. Kim, Mater. Charact. 1044-5803 10.1016/j.matchar.2005.11.020, 56, 245 (2006).
- (2006) Mater. Charact. , vol.56 , pp. 245
- Kim, M.S.¹

6
- 33748479283
- 0003-6951 10.1063/1.2338586
- R. Y. Kim, H. G. Kim, and S. G. Yoon, Appl. Phys. Lett. 0003-6951 10.1063/1.2338586, 89, 102107 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 102107
- Kim, R.Y.¹ Kim, H.G.² Yoon, S.G.³

7
- 33645544859
- 1071-1023 10.1116/1.2180260
- C. J. Kim, K. J. Choi, S. O. Ryu, S. M. Yoon, N. Y. Lee, B. G. Yu, and S. G. Yoon, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2180260, 24, 721 (2006).
- (2006) J. Vac. Sci. Technol. B , vol.24 , pp. 721
- Kim, C.J.¹ Choi, K.J.² Ryu, S.O.³ Yoon, S.M.⁴ Lee, N.Y.⁵ Yu, B.G.⁶ Yoon, S.G.⁷

8
- 33749396933
- 1071-1023 10.1116/1.2348884
- S. J. Lee, K. J. Choi, S. O. Ryu, S. M. Yoon, N. Y. Lee, B. G. Yu, and S. G. Yoon, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.2348884, 24, 2312 (2006).
- (2006) J. Vac. Sci. Technol. B , vol.24 , pp. 2312
- Lee, S.J.¹ Choi, K.J.² Ryu, S.O.³ Yoon, S.M.⁴ Lee, N.Y.⁵ Yu, B.G.⁶ Yoon, S.G.⁷

9
- 33750429588
- 1099-0062 10.1149/1.2360017
- S. J. Lee, K. J. Choi, S. O. Ryu, S. M. Yoon, N. Y. Lee, B. G. Yu, and S. G. Yoon, Electrochem. Solid-State Lett. 1099-0062 10.1149/1.2360017, 9, G364 (2006).
- (2006) Electrochem. Solid-State Lett. , vol.9 , pp. 364
- Lee, S.J.¹ Choi, K.J.² Ryu, S.O.³ Yoon, S.M.⁴ Lee, N.Y.⁵ Yu, B.G.⁶ Yoon, S.G.⁷

10
- 35648960287
- 0021-8979 10.1063/1.2795673
- R. Y. Kim, H. G. Kim, and S. G. Yoon, J. Appl. Phys. 0021-8979 10.1063/1.2795673, 102, 083531 (2007).
- (2007) J. Appl. Phys. , vol.102 , pp. 083531
- Kim, R.Y.¹ Kim, H.G.² Yoon, S.G.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.