E-ALD of Cu nanofilms on Ru/Ta wafers using surface limited redox replacement

Journal of the Electrochemical Society

Volumn 157, Issue 8, 2010, Pages

  Thambidurai, Chandru ^a   Gebregziabiher, Daniel K ^a   Liang, Xuehai ^a   Zhang, Qinghui ^a   Ivanova, Valentina ^b   Haumesser, Paul Henri ^b   Stickney, John L ^a  

^a UNIVERSITY OF GEORGIA   (United States)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE; AUGER SPECTROSCOPY; AUTOMATED FLOW; COATED WAFERS; COMPLEXING AGENTS; CU DEPOSITION; CU FILMS; CU(1 1 1); ELECTROCHEMICAL SYSTEMS; ELECTROCHEMICAL TREATMENTS; NANO FILMS; OPEN-CIRCUIT POTENTIAL; OXIDE REMOVAL;

ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; ELECTRON PROBE MICROANALYSIS; HOLOGRAPHIC INTERFEROMETRY; ION BOMBARDMENT; METALLIC FILMS; OXYGEN; VACUUM; X RAY DIFFRACTION;

COPPER;

EID: 77954720380     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3454213     Document Type: Article

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