Annealing reaction for Ni silicidation of Si nanowire

ECS Transactions

Volumn 25, Issue 7, 2009, Pages 447-454

  Arai, H ^a   Kamimura, H ^a   Sato, S ^a   Kakushima, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Natori, K ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; NANOWIRES; NICKEL; TEMPERATURE;

LOW TEMPERATURES; NI SUICIDE; SI NANOWIRE; SILICIDATION; SOI SUBSTRATES; TIME DEPENDENCE; TWO-STEP ANNEALING;

SILICON;

EID: 74349131105     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3203982     Document Type: Conference Paper

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