High velocity Si-nanodot: A candidate for SRAM applications at 16nm node and below

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 240-241

  Bidal, G ^a,b   Boeuf, F ^a   Denorme, S ^a   Loubet, N ^a   Huguenin, J L ^a,b   Perreau, P ^c   Fleury, D ^a,b   Leverd, F ^a   Lagrasta, S ^a   Barnola, S ^c   Salvetat, T ^c   Orlando, B ^a   Beneyton, R ^a   Clement, L ^a   Pantel, R ^a   Monfray, S ^a   Ghibaudo, G ^b   Skotnicki, T ^a  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION-ORIENTED; BULK WAFERS; GATE-ALL-AROUND MOSFET; HIGH QUALITY; HIGH VELOCITY; MOS-FET; NANODOTS; NANOMETRICS; NEW PROCESS; PHOTO-LITHOGRAPHIC; SILICON-ON-NOTHING TECHNOLOGIES; SRAM APPLICATIONS;

LITHOGRAPHY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STATIC RANDOM ACCESS STORAGE;

MOSFET DEVICES;

EID: 71049159637     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)

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