Evaluation of lateral Ni diffusion in Si nanowire Schottky contact

ECS Transactions

Volumn 18, Issue 1 PART 1, 2009, Pages 71-75

  Kamimura, H ^a   Arai, H ^a   Sato, S ^a   Kakushima, K ^a   Ahmet, P ^a   Tsutsui, K ^a   Sugii, N ^a   Hattori, T ^a   Iwai, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; HIGHER TEMPERATURES; NI DIFFUSION; SCANNING ELECTRON MICROSCOPE; SCHOTTKY CONTACTS; SI NANOWIRE;

DIFFUSION; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS;

ACTIVATION ENERGY;

EID: 77950660789     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3096430     Document Type: Conference Paper

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