Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper

Semiconductor Science and Technology

Volumn 26, Issue 5, 2011, Pages

  Lee, D H ^a,b   Lee, H K ^a   Yu, J S ^a   Bae, S J ^b   Choi, J H ^b   Kim, D H ^b   Ju, I C ^b   Song, K M ^b   Kim, J M ^b   Shin, C S ^b  

^a Kyung Hee University   (South Korea)

^b Korea Advanced Nano Fab Center (KANC)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC TEMPERATURE; COPPER ELECTROPLATING; ELECTROPLATED COPPER; EMISSION PEAKS; FAR-FIELD PATTERNS; FORWARD VOLTAGE; HEAT DISSIPATION CAPABILITY; HIGH THERMAL CONDUCTIVITY; INGAN/GAN; INJECTION CURRENTS; JUNCTION TEMPERATURES; LAMBERTIAN; LASER LIFT-OFF; MULTIPLE QUANTUM WELLS; OUTPUT POWER; SAPPHIRE SUBSTRATES; THERMAL CHARACTERISTICS; THERMAL RESISTANCE; VERTICAL LIGHT-EMITTING DIODES;

COPPER; ELECTROPLATING; LIGHT EMISSION; LIGHT EMITTING DIODES; QUANTUM WELL LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79953246856     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/5/055014     Document Type: Article

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