Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 79-84

  Lee, H K ^a   Lee, D H ^a   Song, Y M ^b   Lee, Y T ^b   Yu, J S ^a  

^a Kyung Hee University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

AlGaInP GaInP; Junction temperature; Light emitting diodes; Thermal analysis

Indexed keywords

ALGAINP/GAINP; CALCULATED VALUES; CHIP SIZES; EL EMISSION PEAK; ELECTROLUMINESCENCE EMISSION; FORWARD VOLTAGE; HEAT REMOVAL; HEAT SOURCES; INJECTION CURRENTS; JUNCTION TEMPERATURES; THERMAL ANALYSIS; THERMAL MEASUREMENTS; THERMAL PARAMETERS; THERMAL PROPERTIES; THERMAL RESISTANCE; THICK SUBSTRATES; THIN SUBSTRATE;

ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; THERMAL VARIABLES MEASUREMENT; THERMOANALYSIS; THERMODYNAMIC PROPERTIES;

SUBSTRATES;

EID: 78751641409     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.007     Document Type: Article

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