Research on the junction-temperature characteristic of GaN light-emitting diodes on Si substrate

Journal of Luminescence

Volumn 122-123, Issue 1-2, 2007, Pages 693-695

  Jiang, Fengyi ^a   Liu, Weihua ^a   Li, Youqun ^a   Fang, Wenqing ^a   Mo, Chunlan ^a   Zhou, Maoxing ^a   Liu, Hechu ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

GaN; Junction temperature; LED; Si substrate

Indexed keywords

GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

JUNCTION TEMPERATURE;

LIGHT EMITTING DIODES;

EID: 33750943363     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.01.262     Document Type: Article

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