Thermal analysis and characterization of the effect of substrate thinning on the peformances of GaN-based light emitting diodes

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1497-1504

  Lee, H K ^a   Yu, J S ^a   Lee, Y T ^b  

^a Kyung Hee University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Electroluminescence; Finite element method; Junction temperature; Light emitting devices

Indexed keywords

CHARACTERISTIC TEMPERATURE; DIFFERENT SUBSTRATES; ELECTROLUMINESCENCE SPECTRA; FORWARD VOLTAGE; HEAT DISSIPATION; HEAT EXTRACTION; HEAT SOURCES; HIGH INJECTION; INGAN/GAN; INJECTION CURRENTS; JUNCTION TEMPERATURES; LIGHT EMITTING DEVICES; MEASURED DATA; SUBSTRATE THICKNESS; SUBSTRATE THINNING; TEMPERATURE DEPENDENT; THERMAL ANALYSIS; THERMAL CHARACTERISTICS; THERMAL RESISTANCE; THICK SUBSTRATES; THIN SUBSTRATE; THINNER SUBSTRATES;

CURRENT DENSITY; ELECTROLUMINESCENCE; FINITE ELEMENT METHOD; GALLIUM NITRIDE; HEAT RESISTANCE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; SUBSTRATES; THERMOANALYSIS; THREE DIMENSIONAL;

GALLIUM ALLOYS;

EID: 77954270734     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925575     Document Type: Article

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