High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques

IEEE Photonics Technology Letters

Volumn 17, Issue 9, 2005, Pages 1809-1811

  Lin, W Y ^a   Wuu, D S ^a,b   Pan, K F ^a   Huang, S H ^a   Lee, C E ^a   Wang, W K ^a   Hsu, S C ^a   Su, Y Y ^a   Huang, S Y ^c   Horng, R Hua ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c DA YEH UNIVERSITY   (Taiwan)

Author keywords

Electroplating; GaN; Laser liftoff (LLO); Light emitting diode (LED)

Indexed keywords

ANNEALING; COPPER; ELECTROPLATING; EXCIMER LASERS; GALLIUM NITRIDE; HEAT SINKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; PHOTOLITHOGRAPHY; PLATINUM; SAPPHIRE;

EPIWAFERS; LASER LIFTOFF (LLO); LUMINANCE INTENSITY; REFLECTIVE MIRROR;

LIGHT EMITTING DIODES;

EID: 27144455699     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.852321     Document Type: Article

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