Highly efficient GaN vertical light emitting diode on metal alloy substrate from near UV to green color for solid state lighting application

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6337, Issue , 2006, Pages

  Cheng, Chao Chen ^b   Chu, Chen Fu ^b   Liu, Wen Huan ^b   Chu, Jiunn Yi ^b   Cheng, Hao Chun ^b   Fan, Feng Hsu ^b   Yen, Jui Kang ^b   Tran, Chuong Anh ^a   Doan, Trung ^a  

^a SemiLEDs Corp   (United States)

^b Semi Photonics   (Taiwan)

Author keywords

CCT; CRI; GaN; LED; Metal substrate; Solid state lighting; VLED

Indexed keywords

GALLIUM NITRIDE; HEAT CONDUCTION; PHOSPHORS; SUBSTRATES; ULTRAVIOLET RADIATION;

METAL SUBSTRATES; POLYCHROMATIC PHOSPHOR; SOLID STATE LIGHTING (SSL);

LIGHT EMITTING DIODES;

EID: 33751072966     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.687636     Document Type: Conference Paper

References (6)

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6. C. Chu, C. Cheng, W. Liu, J. Chu, H. Cheng, F. Fan, J. Yeh, C. Tran and T. Doan, "High brightness GaN vertical light emitting diode on metal alloyed substrate for general lighting application", ISBBLED2006, Montpellier, France, 15-19 May (2006).