High-power GaN LED chip with low thermal resistance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Hon, Schang Jing ^a   Kuo, Cheng Ta ^a   Chen, T P ^a   Hsieh, M H ^a  

^a EPISTAR CORPORATION   (Taiwan)

Author keywords

CMP method; GaN; High power LEDs

Indexed keywords

CUBIC BORON NITRIDE; DC GENERATORS; DIES; ENERGY EFFICIENCY; GALLIUM; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HEALTH; LIGHTING; MICROFLUIDICS; NITRIDES; PIGMENTS; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SOLID STATE DEVICES; SUBSTRATES;

(+ MOD 2N) OPERATION; (E ,3E) PROCESS; DRIVING CURRENTS; FLIP CHIPPING; GAN LEDS; GAN SUBSTRATES; GENERAL (CO); HEAT MANAGEMENT; HIGH CURRENTS; HIGH POWER LED; HIGH POWERS; HIGH-POWER LEDS; IN ORDER; JUNCTION TEMPERATURES; LIGHT-EMITTING DEVICES (LED); NITRIDE MATERIALS; OPTICAL INSTRUMENTATION; SOLID STATES; SQUARE DIE; THIN GAN LED;

GALLIUM ALLOYS;

EID: 42149150382     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.768595     Document Type: Conference Paper

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