Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange

Solid State Communications

Volumn 122, Issue 10, 2002, Pages 553-556

  Wang, Y Q ^a   Wang, Z L ^a   Shen, J J ^b   Brown, A S ^b  

^a Georgia Institute of Technology   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

A. Self assembling; B. InAs quantum dot; C. Anion exchange; D. Stranski Krastanov (S K) growth

Indexed keywords

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NEGATIVE IONS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE;

ANION EXCHANGE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036624428     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00212-0     Document Type: Article

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