Understanding the growth mode transition in InAs/GaAs(0 0 1) quantum dot formation

Surface Science

Volumn 532-535, Issue , 2003, Pages 822-827

  Krzyzewski, T J ^a   Joyce, P B ^a   Bell, G R ^b   Jones, T S ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Scanning tunneling microscopy; Surface structure, morphology, roughness, and topography

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SURFACE ROUGHNESS;

GROWTH MODE TRANSITIONS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0038476576     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00455-2     Document Type: Conference Paper

References (20)

1. Bell G.R.et al. Phys. Rev. B. 61:2000;R10551.
2. Joyce P.B.et al. Phys. Rev. B. 58:1998;R15981.
3. Joyce P.B.et al. Phys. Rev. B. 62:2000;10891.
4. Krzyzewski T.J.et al. Surf. Sci. 482-485:2001;891.
5. Belk J.G.et al. Surf. Sci. 387:1997;213.
6. Marquez J., Geelhar L., Jacobi K. Appl. Phys. Lett. 78:2001;2309.
7. Venables J., Spiller G.D.T., Hanbucken M. Rep. Prog. Phys. 47:1984;399.
8. Amar J.G., Family F. Phys. Rev. Lett. 74:1995;2066.
9. Bressler-Hill V.et al. Phys. Rev. Lett. 74:1995;3209.
10. T.J. Krzyzewski et al. (unpublished).
11. Bartelt M.C., Evans J.W. Phys. Rev. B. 46:1992;12675.
12. Joyce B.A., Jones T.S., Belk J.G. J. Vac. Sci. Technol. B. 16:1998;2372.
13. Ebiko Y.et al. Phys. Rev. Lett. 80:1998;2650.
14. Ebiko Y.et al. Phys. Rev. B. 60:1999;8234.
15. Nabetani Y.et al. J. Appl. Phys. 76:1994;347 Hasegawa Y.et al. Appl. Phys. Lett. 72:1998;2265.
16. Nabetani Y.et al. J. Appl. Phys. 76:1994;347 Hasegawa Y.et al. Appl. Phys. Lett. 72:1998;2265.
17. Itoh M.et al. Surf. Sci. 464:2000;200.
18. Itoh M. Prog. Surf. Sci. 66:2000;53.
19. Krzyzewski T.J.et al. Phys. Rev. B. 66:2002;R121307.
20. Krzyzewski T.J.et al. Phys. Rev. B. 66:2002;R201302.