Energetics of the growth mode transition in InAs/GaAs(0 0 1) small quantum dot formation: A first-principles study

Surface Science

Volumn 600, Issue 10, 2006, Pages 2007-2010

  Liu, En Zuo ^a   Wang, Chong Yu ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

Density functional calculations; Gallium arsenide; Growth mode transition; Indium arsenide; Surface thermodynamics

Indexed keywords

CRYSTAL GROWTH; FREE ENERGY; PHASE TRANSITIONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR QUANTUM DOTS; THERMODYNAMICS;

CRITICAL THICKNESS; DENSITY-FUNCTIONAL CALCULATIONS; GALLIUM ARSENIDE; GROWTH MODE TRANSITION; INDIUM ARSENIDE; SURFACE THERMODYNAMICS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33747798366     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.02.031     Document Type: Article

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