Dynamics of In atom during InAs/GaAs(0 0 1) growth process

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 478-482

  Ishii, A ^a,b   Fujiwara, K ^a   Aisaka, T ^a  

^a TOTTORI UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Lattice mismatch heterostructures; Molecular beam epitaxy growth; Quantum dots

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

LATTICE-MISMATCH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0038070396     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00410-0     Document Type: Conference Paper

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