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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 A, 1999, Pages 635-644

Drastic improvement in surface flatness properties by using GaAs (111)a substrates in molecular beam epitaxy

(4) Yamaguchi, Hiroshi a Homma, Yoshikazu a Kanisawa, Kiyoshi a Hirayama, Yoshiro a

a NTT Basic Research Laboratories (Japan)

Author keywords

(111)A; Dislocations; Fermi level pinning; GaAs; Hot electron ransistors; In situ observation; InAs; Scanning electron microscopy; Surface flatness; Two dimensional electron systems

Indexed keywords

EID: 0005792621 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.635 Document Type: Article

Times cited : (19)

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