XPS study of Ni layers deposited on 6H-SiC

Materials Science Forum

Volumn 207-209, Issue PART 1, 1996, Pages 293-296

  Marinova, Ts ^a   Krastev, V ^a   Hallin, C ^b   Yakimova, R ^b   Janzen, E ^b  

^a INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Electrical Properties; Layer; Ni; Ohmic Contact; SiC; XPS

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE MEASUREMENT; INTERFACES (MATERIALS); OHMIC CONTACTS; SILICON CARBIDE; SUBSTRATES; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL ELEMENTS DISTRIBUTION; CHEMICAL STATE; FOUR POINT PROBE METHOD; INTERFACE CHEMISTRY;

NICKEL;

EID: 1842468930     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.207-209.293     Document Type: Article

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