A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Microelectronic Engineering

Volumn 87, Issue 10, 2010, Pages 1872-1878

  Passi, Vikram ^a   Lecestre, Aurelie ^b   Krzeminski, Christophe ^b   Larrieu, Guilhem ^b   Dubois, Emmanuel ^b   Raskin, Jean Pierre ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Electron beam lithography; Germanium deposition; Hydrogen silsesquioxane (HSQ); Lift off technique; Platinum deposition; Tetramethylammonium hydroxide (TMAH)

Indexed keywords

DEPOSITION; ELECTRON BEAMS; GERMANIUM; HYDROFLUORIC ACID; HYDROGEN; PLATINUM; ULTRASONIC APPLICATIONS;

GERMANIUM DEPOSITIONS; HYDROGEN SILSESQUIOXANE; LIFTOFF TECHNIQUE; PLATINUM DEPOSITIONS; TETRAMETHYL AMMONIUM HYDROXIDE;

ELECTRON BEAM LITHOGRAPHY;

EID: 79952442313     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.022     Document Type: Article

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