Germanium as a versatile material for low-temperature micromachining

Journal of Microelectromechanical Systems

Volumn 8, Issue 4, 1999, Pages 366-372

  Li, Biao ^a   Xiong, Bin ^a,b   Jiang, Linan ^a   Zohar, Yitshak ^a   Wong, Man ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ETCHING; HEAT TREATMENT; MASKS; RESIDUAL STRESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SENSORS; STICTION; THERMAL EFFECTS; THIN FILMS;

MICROFABRICATION;

MICROMACHINING;

EID: 0033326774     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/84.809050     Document Type: Article

References (11)

1. Z. Meng, Z. Jin, G. A. Bhat, P. Chu, H. S. Kowk, and M. Wong, "Germanium thin film formation by low-pressure chemical vapor deposition," J. Electrochem. Soc., vol. 144, pp. 1423-1429, 1997.
2. _, "On the formation of solid state crystallized intrinsic polycrystalline germanium thin films," J. Mater. Res., vol. 12, no. 10, pp. 2548-2551 1997.
3. N. Tas, T. Sonnenberg, H. Jansen, R. Legtenberg, and M. Elwenspoek, "Stiction in surface micro-machining," J. Micromech. Microeng., vol. 6, p. 385, 1996.
4. M. Wong and K. C. Saraswat, "SATPOLY: A self-aligned tungsten on polysilicon process for CMOS VLSI applications," IEEE Trans. Electron Devices, vol. 36, pp. 1355-1361, 1989.
5. M. Ozturk, D. Grider, J. Wortman, M. Littlejohn, and Y. Zhong, "Rapid thermal chemical vapor deposition of germanium on silicon and silicon dioxide and new applications of Ge in ULSI technologies," J. Electron. Mater., vol. 19, pp. 1129-1132, 1990.
6. T. I. Kamins, G. Briggs, and R. Williams, "Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001)," Appl. Phys. Lett., vol. 73, pp. 1862-1864, 1998.
7. X. Zhang, T. Zhang, M. Wong, and Y. Zohar, "Rapid thermal annealing of polysilicon thin films," IEEE J. Microelectromech. Syst., vol. 7, pp. 356-364, Dec. 1998.
8. M. Wong, W. H. Ho, M. Yeung, G. Chin, P. Chan, and Y. Zohar, "Pregate oxidation treatment using RF activated nitrogen in a rapid thermal reactor," J. Electrochem. Soc., vol. 146, no. 2, pp. 707-709, 1999.
9. cursive Greek chi for thin-film transistors," J. Electrochem. Soc., vol. 142, pp. 3220-3225, 1995.
10. S. Kanakaraju, A. K. Sood, and S. Mohan, "In-situ Raman monitoring of ultra-thin Ge films," J. Appl. Phys., vol. 84, pp. 5756-5760, 1998.
11. L. Jiang, M. Wong, and Y. Zohar, "Micromachined poly-crystalline thin film temperature sensors," Meas. Sci. Technol., vol. 10, no. 8, pp. 653-664, 1999.