Fabrication and characterization of p-ZnO/n-Zn0.8Cd0.2O/n-ZnO heterojunction

Solid State Communications

Volumn 149, Issue 7-8, 2009, Pages 290-292

  Yuan, G D ^a   Ye, Z Z ^a   Huang, J Y ^a   Zhu, L P ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A. Semiconductors; A. Thin films; B. Crystal growth; D. Electronic transport

Indexed keywords

ALUMINUM; CADMIUM ALLOYS; CRYSTAL GROWTH; CRYSTALLIZATION; CRYSTALS; DISTILLATION; ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; GRAIN BOUNDARIES; GROWTH (MATERIALS); HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; IONIZATION OF GASES; OHMIC CONTACTS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM DOTS; THIN FILMS; ZINC; ZINC OXIDE;

A. SEMICONDUCTORS; A. THIN FILMS; B. CRYSTAL GROWTH; CO DOPED; CONTACT ELECTRODES; D. ELECTRONIC TRANSPORT; EDGE EMISSIONS; P-N JUNCTIONS; PHOTOLUMINESCENCE SPECTRUMS; REVERSE BREAKDOWN VOLTAGES; REVERSE LEAKAGE CURRENTS; ZNO LAYERS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 58149460641     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.12.001     Document Type: Article

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