Structural, optical and electrical properties of Al-N codoped ZnO films by RF-assisted MOCVD method

Applied Surface Science

Volumn 257, Issue 1, 2010, Pages 160-164

  Su, Jianfeng ^a   Zang, Chunhe ^a   Cheng, Chunxiao ^a   Niu, Qiang ^a   Zhang, Yongsheng ^a   Yu, Ke ^b  

^a LUOYANG INSTITUTE OF SCIENCE AND TECHNOLOGY   (China)

^b EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

Al N codoped; MOCVD; ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; II-VI SEMICONDUCTORS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SUPERCONDUCTING FILMS; TEMPERATURE; X RAY DIFFRACTION; ZINC OXIDE;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); AL-DOPED ZNO FILMS; CO-DOPED; CRYSTAL QUALITIES; HALL MEASUREMENTS; OPTICAL AND ELECTRICAL PROPERTIES; RADIO FREQUENCIES; SECONDARY ION MASS SPECTROSCOPIES (SIMS);

ALUMINUM COMPOUNDS;

EID: 77955514903     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.06.056     Document Type: Article

References (22)

1. Z.K. Tang, G.K.L. Wong, P. Yu, M. Kawasaki, A. Ohtomo, H. Koinuma, and Y. Segawa Appl. Phys. Lett. 72 1998 3270
2. J. Hu, H.Y. He, and B.C. Pan J. Appl. Phys. 103 2008 113706
3. L.J. Mandalapu, F.X. Xiu, Z. Yang, D.T. Zhao, and J.L. Liu Appl. Phys. Lett. 88 2006 112108
4. Z.-Q. Fang, B. Claflin, and D.C. Look J. Appl. Phys. 103 2008 073714
5. C.H. Park, S.B. Zhang, and S.H. Wei Phys. Rev. B 66 2002 073202
6. A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. Chichibu, and M. Kawasaki Jpn. J. Appl. Phys. 44 2005 L643
7. Shujie Jiao, Youming Lu, Zhengzhong Zhang, Binghui Li, Bin Yao, Jiying Zhang, Dongxu Zhao, Dezhen Shen, and Xiwu Fan J. Appl. Phys. 102 2007 113509
8. H.W. Liang, Y.M. Lu, D.Z. Shen, Y.C. Liu, J.F. Yan, C.X. Shan, B.H. Li, Z.Z. Zhang, J.Y. Zhang, and X.W. Fan Phys. Status Solidi A 202 2005 1060
9. D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, and G. Cantwell Appl. Phys. Lett. 81 2002 1830
10. I. Volintiru, M. Creatore, W.H. van Helvoort, J.L. Linden, and M.C.M.V. Sanden Appl. Phys. Lett. 89 2006 022110
11. Z.P. Wei, Y.M. Lu, D.Z. Shen, Z.Z. Zhang, B. Yao, B.H. Li, J.Y. Zhang, D.X. Zhao, X.W. Fan, and Z.K. Tang Appl. Phys. Lett. 90 2007 042113 42121
12. Junjie Zhu, Ran Yao, Sheng Zhong, Zhuxi Fu, and In-Hwan Lee J. Cryst. Growth 303 2007 655
13. A. Tsukazaki, A. Ohtomo, S. Yoshida, M. Kawasaki, C.H. Chia, T. Makino, Y. Segawa, T. Koida, S.F. Chichibu, and H. Koinuma Appl. Phys. Lett. 83 2003 2784
14. C. Boemare, T. Monteiro, M.J. Soares, J.G. Guilherme, and E. Alves Physica B 308 2001 985
15. B.X. Lin, Z.X. Fu, and Y.B. Jia Appl. Phys. Lett. 79 2001 943
16. H.S. Kang, J.S. Kang, J.W. Kim, and S.Y. Lee J. Appl. Phys. 95 2004 1246
17. F.H. Leiter, H.R. Alves, A. Hofstaetter, D.M. Hofmann, and B.K. Meyer Phys. Status Solidi (B) 226 2001 R4 R5
18. B.K. Meyer, J. Sann, D.M. Hofmann, C. Neumann, and A. Zeuner Semicond. Sci. Technol. 20 2005 S62
19. G. Xiong, K.B. Ucer, R.T. Williams, J. Lee, D. Bhattacharyya, J. Metson, and P. Evans J. Appl. Phys. 97 2005 043528
20. C.H. Zang, D.M. Zhang, C.J. Tang, S.J. Fang, Z.J. Zong, Y.X. Yang, C.H. Zhao, and Y.S. Zhang J. Phys. Chem. C 113 2009 18527
21. K. Tamura, T. Makino, A. Tsukazaki, M. Sumiya, S. Fuke, T. Furumochi, M. Lippmaa, C.H. Chia, Y. Segawa, H. Koinuma, and M. Kawasaki Solid State Commun. 127 2003 265
22. A. Zeuner, H. Alves, D.M. Hofmann, B.K. Meyer, A. Hoffmann, U. Haboeck, M. Strassburg, and M. Dworzak Phys. Status Solidi (B) 234 2002 R7 R9