Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells

Nanotechnology

Volumn 21, Issue 5, 2010, Pages

  Pizzi, Giovanni ^a   Virgilio, Michele ^b   Grosso, Giuseppe ^b  

^a INFM   (Italy)

^b UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CARRIER INJECTION; CONDUCTION STATE; DENSITY OF STATE; ELECTRONIC BAND STRUCTURE; GAIN RATIO; GAP STATE; HETEROSTRUCTURES; LIGHT AMPLIFICATION; MQW MATERIALS; MULTIPLE QUANTUM WELLS; NUMERICAL EVALUATIONS; NUMERICAL RESULTS; ORBITAL CONTRIBUTION; QUANTUM WELL; STRAIN FIELDS; STRAIN-DEPENDENT; STRAINED-GE; TIGHT BINDING; TIGHT-BINDING CALCULATIONS; TM POLARIZATION;

AMPLIFICATION; BINDING ENERGY; GERMANIUM; NUMERICAL ANALYSIS; TENSILE STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 75249083776     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/5/055202     Document Type: Article

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