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Volumn 91, Issue 2, 2007, Pages

Decrease in switching voltage fluctuation of PtNi Ox Pt structure by process control

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; FLASH MEMORY; INTERFACES (MATERIALS); NONVOLATILE STORAGE; PLATINUM COMPOUNDS; PROCESS CONTROL;

EID: 34547191632     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2755712     Document Type: Article
Times cited : (64)

References (12)
  • 5
    • 0001418745 scopus 로고
    • St. Uhlenbrock, Chr. Scharfschwerdt, M. Neumann, G. Illing, and H.-J. Freund, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/4/40/009 4, 7973 (1992); M. A. van Veenendaal and G. A. Sawatzky, Phys. Rev. Lett. 70, 2459 (1993).
    • (1993) Phys. Rev. Lett. , vol.70 , pp. 2459
    • Van Veenendaal, M.A.1    Sawatzky, G.A.2
  • 6
    • 0003828439 scopus 로고
    • Auger and X-ray Photoelectron Spectroscopy (Wiley, New York
    • D. Briggs and M. P. Seah, Practical Surface Analysis, Auger and X-ray Photoelectron Spectroscopy (Wiley, New York, 1990), Vol. 1, p. 169.
    • (1990) Practical Surface Analysis , vol.1 , pp. 169
    • Briggs, D.1    Seah, M.P.2
  • 10
    • 34547165455 scopus 로고    scopus 로고
    • We have obtained the HRTEM images for a Ni Ox film at several electric states of on (low resistance), off (high resistance), and BD (breakdown) as well as pristine state. In the case of BD state achieved using stress of strong voltage, the defective structure of Ni Ox dominantly appears (unpublished).
    • We have obtained the HRTEM images for a Ni Ox film at several electric states of on (low resistance), off (high resistance), and BD (breakdown) as well as pristine state. In the case of BD state achieved using stress of strong voltage, the defective structure of Ni Ox dominantly appears (unpublished).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.