Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  Pozina, G ^a   Hemmingsson, C ^a   Bergman, J P ^a   Trinh, D ^a   Hultman, L ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; EXCITONS; POINT DEFECTS; VAPOR PHASE EPITAXY; WSI CIRCUITS;

DONOR BOUND EXCITON (D0 X) LIFETIME; RECOMBINATION TIME; THICKER LAYERS;

GALLIUM NITRIDE;

EID: 34249887890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2743950     Document Type: Article

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