Imaging minority carrier diffusion in GaN nanowires using near field optical microscopy

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4933-4936

  Baird, Lee ^a   Ang, G H ^a   Low, C H ^a   Haegel, N M ^a   Talin, A A ^b   Li, Qiming ^c   Wang, G T ^c  

^a NAVAL POSTGRADUATE SCHOOL   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Diffusion length; GaN nanowires; Minority carrier; Near field scanning optical microscopy; NSOM; Transport imaging

Indexed keywords

ALGAN; CARRIER DIFFUSION LENGTH; CARRIER RECOMBINATION; CORE-SHELL NANOWIRES; DIFFUSION LENGTH; DIRECT MEASURES; GAN NANOWIRES; HIGH SPATIAL RESOLUTION; MINORITY CARRIER; MINORITY CARRIER DIFFUSION; MINORITY CARRIER DIFFUSION LENGTH; MOCVD; NEAR FIELD OPTICAL MICROSCOPY; NEAR FIELDS; NEAR-FIELD; OPEN ARCHITECTURE; POINT SOURCES; SCANNING ELECTRON MICROSCOPE; SEMICONDUCTOR NANOSTRUCTURES; SINGLE IMAGES; TUNING FORKS; WAVEGUIDE MODE;

CHEMICAL VAPOR DEPOSITION; COMPUTER ARCHITECTURE; DIFFUSION; ELECTRON BEAMS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; NANOWIRES; OPTICAL DATA STORAGE; OPTICAL INSTRUMENTS; OPTICAL SYSTEMS; SCANNING; SCANNING ELECTRON MICROSCOPY;

NEAR FIELD SCANNING OPTICAL MICROSCOPY;

EID: 74349123806     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.280     Document Type: Article

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