Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation

Solid-State Electronics

Volumn 50, Issue 1, 2006, Pages 86-93

  Samsudin, K ^a   Cheng, B ^a   Brown, A R ^a   Roy, S ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

BSIMSOI; Fluctuations; MOSFET; SRAM; Statistical circuit simulation; UTB SOI

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POWER UTILIZATION; MOSFET DEVICES; STATIC RANDOM ACCESS STORAGE;

BSIMSOI; FLUCTUATIONS; STATISTICAL CIRCUIT SIMULATION; UTB SOI;

SILICON ON INSULATOR TECHNOLOGY;

EID: 30344447576     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.048     Document Type: Conference Paper

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