Direct carrier multiplication due to inverse auger scattering in CdSe quantum dots

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2409-2411

  Califano, Marco ^a   Zunger, Alex ^a   Franceschetti, Alberto ^b  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MULTIPLICATION PROCESSES; CONDUCTION BANDS; MOMENTUM CONSERVATION; VALENCE BANDS;

AUGER ELECTRON SPECTROSCOPY; COOLING; ELECTRIC EXCITATION; ENERGY GAP; MATHEMATICAL MODELS; OPTOELECTRONIC DEVICES; SEMICONDUCTING CADMIUM COMPOUNDS; SURFACE TREATMENT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2142811570     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690104     Document Type: Article

References (30)

1. W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961).
2. A. J. Nozik, Physica E (Amsterdam) 14, 115 (2002).
3. S. Kolodinski, J. H. Werner, T. Wittchen, and H. J. Queisser, Appl. Phys. Lett. 63, 2405 (1993); J. H. Werner, S. Kolodinski, and H. J. Queisser, Phys. Rev. Lett. 72, 3851 (1994).
4. S. Kolodinski, J. H. Werner, T. Wittchen, and H. J. Queisser, Appl. Phys. Lett. 63, 2405 (1993); J. H. Werner, S. Kolodinski, and H. J. Queisser, Phys. Rev. Lett. 72, 3851 (1994).
5. P. T. Landsberg, H. Nussbaumer, and G. Willeke, J. Appl. Phys. 74, 1451 (1993); J. K. Liakos and P. T. Landsberg, Semicond. Sci. Technol. 11, 1895 (1996).
6. P. T. Landsberg, H. Nussbaumer, and G. Willeke, J. Appl. Phys. 74, 1451 (1993); J. K. Liakos and P. T. Landsberg, Semicond. Sci. Technol. 11, 1895 (1996).
7. W. Spirkl and H. Ries, Phys. Rev. B 52, 11 319 (1995).
8. A. De Vos and B. Desoete, Sol. Energy Mater. Sol. Cells 51, 413 (1998).
9. R. C. Alig, S. Bloom, and C. W. Struck, Phys. Rev. B 22, 5565 (1980).
10. J. Bude and K. Hess, J. Appl. Phys. 72, 3554 (1992).
11. H. K. Jung, K. Taniguchi, and C. Hamaguchi, J. Appl. Phys. 79, 2473 (1996).
12. D. Harrison, R. A. Abram, and S. Brand, J. Appl. Phys. 85, 8186 (1999).
13. M. Wolf, R. Brendel, J. H. Werner, and H. J. Queisser, J. Appl. Phys. 83, 4213 (1998).
14. S. Kolodinski, J. H. Werner, and H. J. Queisser, Appl. Phys. A: Mater. Sci. Process. 61, 535 (1995).
15. L.-W. Wang, M. Califano, A. Zunger, and A. Franceschetti, Phys. Rev. Lett. 91, 056404 (2003).
16. P. C. Sercel, Al. L. Efros, and M. Rosen, Phys. Rev. Lett. 83, 2394 (1999).
17. L.-W. Wang, Phys. Rev. B 61, 7241 (2000); L. W. Wang, A. J. Williamson, A. Zunger, H. Jiang, and J. Singh, Appl. Phys. Lett. 76, 339 (2000).
18. L.-W. Wang, Phys. Rev. B 61, 7241 (2000); L. W. Wang, A. J. Williamson, A. Zunger, H. Jiang, and J. Singh, Appl. Phys. Lett. 76, 339 (2000).
19. A. V. Rodina, A. Yu. Alekseev, Al. L. Efros, M. Rosen, and B. K. Meyer, Phys. Rev. B 65, 125302 (2002).
20. L.-W. Wang and A. Zunger, Phys. Rev. B 51, 17 398 (1995).
21. M. Califano, G. Bester, and A. Zunger, Nano Lett. 3, 1197 (2003).
22. L.-W. Wang and A. Zunger, Phys. Rev. B 53, 9579 (1996).
23. A. Franceschetti, H. Fu, L.-W. Wang, and A. Zunger, Phys. Rev. B 60, 1819 (1999).
24. P. T. Landsberg, Recombination in Semiconductors (Cambridge University Press, Cambridge, 1991).
25. W. S. Pelouch, R. J. Ellingson, P. E. Powers, C. L. Tang, D. M. Szmyd, and A. J. Nozik, Phys. Rev. B 45, 1450 (1992).
26. X.-Q. Li and Y. Arakawa, Phys. Rev. B 57, 12285 (1998); X.-Q. Li, H. Nakayama, and Y. Arakawa, Phys. Rev. B 59, 5069 (1999).
27. X.-Q. Li and Y. Arakawa, Phys. Rev. B 57, 12285 (1998); X.-Q. Li, H. Nakayama, and Y. Arakawa, Phys. Rev. B 59, 5069 (1999).
28. J.-Y. Zhang, X.-Y. Wang, M. Xiao, L. Qu, and X. Peng, Appl. Phys. Lett. 81, 2076 (2002).
29. The results obtained by taking only the value at the arrow of the DCM rate vs Δ curve are on the same order of magnitude and exhibit the same behavior as their average.
30. Experimental energy-loss rates for highly excited carriers yield an estimate for Γ around 10 meV, see D. J. Norris, M. Nirmal, C. B. Murray, A. Sacra, and M. G. Bawendi, Z. Phys. D: At., Mol. Clusters 26, 355 (1993).