Application of finite element methods to the simulation of semiconductor devices

Reports on Progress in Physics

Volumn 62, Issue 3, 1999, Pages 277-353

  Miller, J J H ^a   Schilders, W H A ^b   Wang, S ^c  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c CURTIN UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006224016     PISSN: 00344885     EISSN: None     Source Type: Journal    
DOI: 10.1088/0034-4885/62/3/001     Document Type: Article

References (10)

1. Markowich P A 1984 A singular perturbation analysis of the fundamental semiconductor device equations SIAM J. Appl. Math. 5 896-928
2. Miller J J H, O'Riordan E and Shishkin G I 1996 Fitted Numerical Methods for Singular Perturbation Problems (Singapore: World Scientific)
3. Frederiksen T M 1982 Intuitive IC Electronics (New York: McGraw-Hill)
4. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley)
5. Sze S M 1983 VLSI Technology (Singapore: McGraw-Hill)
6. Cercignani C 1975 Theory and Application of the Boltzmann Equation (Edinburgh: Scottish Academic)
7. Markowich P A, Ringhofer C A, and Schmeiser C 1990 Semiconductor Equations (Vienna: Springer)
8. Schilders W H A 1998 Numerical Methods for Semiconductor Device Simulation vol I (Vienna: Springer) in press
9. Schilders W H A 1998 Numerical Methods for Semiconductor Device Simulation vol 2 (Vienna: Springer) in press
10. Mock M S 1972 On equations describing steady state carrier distributions in a semiconductor device Comment. Pure Appl. Math. 25 781-92