A program-erasable high-κ Hf0.3N0.2 O0.5 MIS capacitor with good retention

IEEE Electron Device Letters

Volumn 28, Issue 10, 2007, Pages 913-915

  Yang, H J ^a   Chin, Albert ^a   Chen, W J ^b   Cheng, C F ^a   Huang, W L ^c   Hsieh, I J ^c   McAlister, S P ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL PINGTUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c CHUNG HUA UNIVERSITY   (Taiwan)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Capacitor; Dynamic random access memory (DRAM); Erase; High ; Nonvolatile memory (NVM); Program

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC POTENTIAL; NONVOLATILE STORAGE;

CAPACITANCE DENSITY; DIELECTRIC LAYER; MIS CAPACITOR; NONVOLATILE MEMORY (NVM);

MIS DEVICES;

EID: 34948862160     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.905375     Document Type: Article

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