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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 2, 2005, Pages 267-269

The evolution of arsenic excess induced by thermal annealing in arsenic-rich Ga1-xAsx films

(4) Campomanes, R R a Vilcarromero, J b Galzerani, J C c Da Silva, J H Dias d

a UNIVERSIDADE DO ESTADO DE MATO GROSSO (Brazil)

b Inst de Pesquisa E Desenvolvimento (Brazil)

c FEDERAL UNIVERSITY OF SÃO CARLOS (Brazil)

d SÃO PAULO STATE UNIVERSITY UNESP (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ARSENIC; CRYSTALLIZATION; GRAIN BOUNDARIES; PRECIPITATION (CHEMICAL); RAMAN SCATTERING; SEGREGATION (METALLOGRAPHY); STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLITE BOUNDARIES; FLASH-EVAPORATION PREPARATION; THERMAL ANNEALING; X-RAY ABSORPTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 10644241706 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2557-6 Document Type: Article

Times cited : (8)

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