Highly reliable 0.15μm/14 F2 cell ferroelectric random access memory capacitor using SrRuO3 buffer layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3198-3201

  Heo, Jang Eun ^a   Bae, Byoung Jae ^a   Yoo, Dong Chul ^a   Nam, Sang Don ^a   Lim, Ji Eun ^a   Im, Dong Hyun ^a   Joo, Suk Ho ^a   Jung, Yong Ju ^a   Choi, Suk Hun ^a   Park, Soon Oh ^a   Kim, Hee Seok ^a   Chung, U In ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Buffer layer; Ferroelectric; FRAM; MOCVD; PZT; SrRuO3

Indexed keywords

FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS; THIN FILMS;

BUFFER LAYER; FRAM; PZT; SRRUO3;

CAPACITOR STORAGE;

EID: 33646944119     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3198     Document Type: Article

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