Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate

Solid-State Electronics

Volumn 52, Issue 12, 2008, Pages 1845-1848

  Ogura, A ^a   Yoshida, T ^a   Kosemura, D ^a   Kakemura, Y ^a   Takei, M ^a   Saito, H ^a   Shimura, T ^b   Koganesawa, T ^c   Hirosawa, I ^c  

^a MEIJI UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

In plane XRD; Raman spectroscopy; sc SSOI; Strain; XRT

Indexed keywords

CONFORMAL MAPPING; DEFECTS; DISLOCATIONS (CRYSTALS); POWDERS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; SILICON WAFERS; SPECTRUM ANALYSIS; SUBSTRATES; SUPERCONDUCTING FILMS; SURFACE DEFECTS; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

300MM WAFERS; CRITICAL THICKNESSES; CRYSTAL QUALITIES; DEFECT DISTRIBUTIONS; DEPTH VARIATIONS; IN-PLANE XRD; LAYER TRANSFERS; LINE DEFECTS; MISFIT DISLOCATIONS; PATTERN DEFECTS; RAMAN MAPPINGS; SC-SSOI; SI LAYERS; STARTING MATERIALS; STRAIN DISTRIBUTIONS; STRAINED SI; VIRTUAL SIGE SUBSTRATES; WAFER INSPECTIONS; X-RAY DIFFRACTIONS; XRD MEASUREMENTS; XRD PEAKS; XRT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56049084175     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.048     Document Type: Article

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