Temperature and size dependences of electrostatics and mobility in gate-all-around MOSFET devices

Semiconductor Science and Technology

Volumn 26, Issue 2, 2011, Pages

  Barraud, S ^a   Sarrazin, E ^a   Bournel, A ^b  

^a CEA LETI   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; ELECTRON PHONON; ELECTRONIC INSTABILITIES; FERMI ENERGY; FERMI GOLDEN RULE; GATE BIAS; GATE-ALL-AROUND MOSFET; INVERSION CHARGE; LOW TEMPERATURES; ONE-DIMENSIONAL STRUCTURE; ROUGHNESS SCATTERING; SCATTERING MECHANISMS; SELF-CONSISTENT SOLUTION; SILICON NANOWIRES; SIZE DEPENDENCE; TEMPERATURE RANGE; VAN HOVE SINGULARITIES;

CAPACITANCE; ELECTRON MOBILITY; MOSFET DEVICES; NANOWIRES; PHONONS; POISSON EQUATION;

SCATTERING;

EID: 79751497078     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/2/025001     Document Type: Article

References (22)

1. Suk D et al 2007 Tech. Dig. Int. Electron Devices Meet. p 891
2. Tachi K et al 2009 Tech. Dig. Int. Electron Devices Meet.
3. Chen J, Saraya T, Miyaji K, Shimizu K and Hiramoto T 2008 Symp. VLSI Technology, Digest of Technical Papers pp 32-3
4. Buin A K, Verma A and Anantram M P 2008 J. Appl. Phys. 104 053716
5. Kotlyar R, Obradovic B, Matagne P, Stettler M and Giles M D 2004 Appl. Phys. Lett. 84 5270
6. Jin S, Fischetti M V and Tang T 2007 J. Appl. Phys. 102 083715
7. Godoy A, Ruiz F, Sampedro C, Gamiz F and Ravaioli U 2007 Solid-State Electron. 51 1211
8. Ramayya E B, Vasileska D, Goodnick S M and Knezevic I 2008 J. Appl. Phys. 104 063711
9. Sarrazin E, Barraud S, Triozon F and Bournel A 2009 J. Phys.: Conf. Ser. 193 012126
10. Poli S, Pala M, Poiroux T, Deleonibus S and Baccarani G 2008 IEEE Trans. Electron. Devices 56 1191
11. Chin S K, Ligatchev V, Rustagi S C, Zhao H, Samudra G S, Singh N, Lo G Q and Kwong D-L 2009 IEEE Trans. Electron. Devices 56 2312
12. Gnani E, Marchi A, Reggiani S, Rudan M and Baccarani G 2006 Solid-State Electron. 50 709
13. Zhao H et al 2008 Tech. Dig. Int. Electron Devices Meet. p 769
14. Colinge J-P et al 2006 IEEE Electron Device Lett. 27 120
15. Yoshioka H, Morioka N, Suda J and Kimoto T 2009 J. Appl. Phys. 106 034312
16. Sarrazin E, Barraud S, Triozon F and Bournel A 2008 Simul. Semicond. Process. Devices (SISPAD) 349 4648309
17. Lieber C M and Wang Z L 2007 MRS Bulletin Sarrazin 32 99
18. Jin S, Fischetti M V and Tang T 2007 J. Appl. Phys. 102 083715
19. Goodnick S M, Ferry D K, Wilmsen C W, Liliental Z, Fathy D and Krivanek O L 1975 Phys. Rev. B 12 2265
20. Esseni D and Sangiorgi E 2004 Solid-State Electron. 48 927
21. Dollfus P 1997 J. Appl. Phys. 82 3911
22. Sakaki H 1980 Japan. J. Appl. Phys. 19 L735