SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 3, 2009, Pages

Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors

(4) Yoshioka, Hironori a Morioka, Naoya a Suda, Jun a Kimoto, Tsunenobu a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC-PHONON SCATTERING; CROSS SECTION; EFFECTIVE MASS APPROXIMATION; GATE VOLTAGES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFET STRUCTURES; MOSFETS; ONE-DIMENSIONAL; ONE-DIMENSIONAL DENSITY; RECTANGULAR SHAPES; RELAXATION TIME APPROXIMATION;

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FERMI LEVEL; FERMIONS; MOSFET DEVICES; NANOWIRES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 69149108924 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3187803 Document Type: Article

Times cited : (9)

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