Calculation of the phonon-limited mobility in silicon Gate All-Around MOSFETs

Solid-State Electronics

Volumn 51, Issue 9, 2007, Pages 1211-1215

  Godoy, A ^a   Ruiz, F ^a   Sampedro, C ^a   Gamiz F ^a   Ravaioli, U ^b  

^a UNIVERSITY OF GRANADA   (Spain)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; NANOWIRES; SILICON; SILICON ON INSULATOR TECHNOLOGY; TWO DIMENSIONAL;

PHONON-LIMITED ELECTRON MOBILITY; SILICON CROSS-SECTIONS;

MOSFET DEVICES;

EID: 34548535360     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.025     Document Type: Article

References (13)

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